[8a-N401-1~12] 15.5 Group IV crystals and alloys

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[8a-N401-4] Rapid formation of GeH layers on Ge/Si(111) at room temperature

〇Kaito Nakajima¹, Atsuki Nakayama¹, Wei-Chen Wen², Yuji Yamamoto², Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,3, Masaaki Araidai^1,3, Masashi Kurosawa¹ (1.Nagoya Univ., 2.IHP - Leibniz Institute for High Performance Microelectronics, 3.IMaSS)

Keywords:

semiconductor,2D material