[8a-N401-1~12] 15.5 Group IV crystals and alloys

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)English Presentation

[8a-N401-5] Effect of Al and Al₂O₃ layers on the selective area growth of GeS thin films

〇Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

Keywords:

GeS

Germanium monosulfide (GeS) has been considered as one of the potential 2D layered semiconductors for developing next-generation functaional devices. In this study, we investigated the effects of Al and Al₂O₃ layers on the selective area growth of GeS thin films and their birefringence.