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10:30 〜 10:45英語発表

[8a-N401-5]Effect of Al and Al₂O₃ layers on the selective area growth of GeS thin films

〇Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

キーワード：

GeS

Germanium monosulfide (GeS) has been considered as one of the potential 2D layered semiconductors for developing next-generation functaional devices. In this study, we investigated the effects of Al and Al₂O₃ layers on the selective area growth of GeS thin films and their birefringence.

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講演情報

[8a-N401-5]Effect of Al and Al2O3 layers on the selective area growth of GeS thin films

キーワード：

[8a-N401-5]Effect of Al and Al₂O₃ layers on the selective area growth of GeS thin films