Presentation Information
[8a-N401-9]Thermoelectric Performance of Polycrystalline Mg2SiGeSn Thin Films
〇(M1)Takenori Nakajima1, Takamitsu Ishiyama1, Shintaro Maeda1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba)
Keywords:
thermoelectric conversion,polycrystalline thin film,crystal growth
Narrow-gap semiconductors Mg2X (X = Si, Ge, Sn) have long attracted attention as environmentally friendly thermoelectric materials due to their relatively large Seebeck coefficient S at room temperature. However, their high thermal conductivity κ has been a bottleneck for improving thermoelectric performance. We have previously demonstrated enhanced thermoelectric properties by reducing κ in polycrystalline solid-solution thin films. In this study, we aimed to synthesize Mg2SiGeSn thin films on glass substrates, evaluate their thermoelectric properties, and explore their applicability to plastic substrates.