[8a-N401-1~12] 15.5 Group IV crystals and alloys

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-N401-9] Thermoelectric Performance of Polycrystalline Mg₂SiGeSn Thin Films

〇(M1)Takenori Nakajima¹, Takamitsu Ishiyama¹, Shintaro Maeda¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

Keywords:

thermoelectric conversion,polycrystalline thin film,crystal growth

Narrow-gap semiconductors Mg₂X (X = Si, Ge, Sn) have long attracted attention as environmentally friendly thermoelectric materials due to their relatively large Seebeck coefficient S at room temperature. However, their high thermal conductivity κ has been a bottleneck for improving thermoelectric performance. We have previously demonstrated enhanced thermoelectric properties by reducing κ in polycrystalline solid-solution thin films. In this study, we aimed to synthesize Mg₂SiGeSn thin films on glass substrates, evaluate their thermoelectric properties, and explore their applicability to plastic substrates.