[8a-N403-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-N403-10] TCAD Analysis of the Impact of 3C/4H-SiC Heterostructures on Device Characteristics

〇(M1)Kota Gejo¹, Hatakeyama Tetsuo¹, Nagasawa Hiroyuki^2,3 (1.Toyama Pref. Univ., 2.CUSIC, 3.Tohoku Inst.)

Keywords:

3C-SiC/4H-SiC heterostructure,spontaneous polarization,depletion layer

In this study, a 3C/4H-SiC heterostructure fabricated by the SLE method was implemented in TCAD to analyze the capacitance–voltage (C–V) characteristics of MOS structures. For the n-type structure, it was found that spontaneous polarization at the heterointerface induces a depletion layer, resulting in reduced capacitance and posing critical considerations for device design.