[8a-N403-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[8a-N403-4] Influence of annealing ambient on the ferroelectric characteristics of HfN thin films formed by ECR-plasma sputtering

〇(D)KANGBAI LI¹, Shun-ichiro Ohmi¹ (1.Science Tokyo)

Keywords:

hafnium nitride,ferroelectric,annealing ambient

The effects of annealing ambient on ferroelectric HfN thin film formation were investigated. The He ambient was found to be effective to improve the ferroelectric characteristics of HfN thin film.