講演情報
[8a-N403-4]Influence of annealing ambient on the ferroelectric characteristics of HfN thin films formed by ECR-plasma sputtering
〇(D)KANGBAI LI1, Shun-ichiro Ohmi1 (1.Science Tokyo)
キーワード：
hafnium nitride、ferroelectric、annealing ambient
The effects of annealing ambient on ferroelectric HfN thin film formation were investigated. The He ambient was found to be effective to improve the ferroelectric characteristics of HfN thin film.