[8p-N105-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-N105-1] Nonvolatile Resistive Switching Memory Characteristics and Interfacial Structure of AlO_x/SiC Heterojunctions

〇Yumeng Zheng¹, Tomohiro Baba¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

Keywords:

ReRAM,SiC,interface structure