[8p-N105-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[8p-N105-8] Carrier Transport of Ultra-Thin W-doped In2O3 Films

〇Tetsuya Yamamoto¹, Hisashi Kitami², Yugo Okada² (1.Kochi Univ. Tech., Res. Inst., 2.SHI)

Keywords:

W-doped In2O3,Carrier transport,Reactive plasma deposition with dc arc discharge

We discuss the carrier transport characteristics of polycrystalline transparent conductive films obtained by the thermal annealing of amorphous W-doped In₂O₃ thin films, which were deposited at room temperature using reactive plasma deposition with dc arc discharge. At film thicknesses of 10 nm or less, where the average free path of carrier electrons is comparable to or less than the film thickness, we observe an increase in electrical resistivity due to a decrease in Hall mobility as the film thickness decreases. In this presentation, we elucidate the structure and properties of these films, and propose a theoretical mechanism for achieving high Hall mobility that is distinct from metal-based systems.