[8p-N301-1~19] 15.4 III-V-group nitride crystals

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[8p-N301-15] Strain compensated AlGaN/InGaN distributed Bragg reflector

〇Takeshi Kawashima¹, Morimasa Kaminishi¹, Chiharu Kimura¹, Shunichi Sato¹ (1.Ricoh)

Keywords:

GaN-VCSEL,DBR

To achieve a short growth time for epitaxial growth DBR, we developed a strain-compensated AlGaN/InGaN DBR using AlGaN, InGaN, and GaN, which allows for a growth rate of over 1µm/h. The strain is compensated by AlGaN and InGaN, while the crystal quality is improved by GaN. We grew a 60.5-period DBR using MOCVD, achieving a reflectivity close to 100% at a central wavelength of 441.7 nm. By optimizing the growth conditions, we were able to grow the 60.5-period DBR in approximately 5 hours.