[8p-N321-1~19] 6.2 Carbon-based thin films

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[8p-N321-15] Crystallinity and Electrical Properties of Heavily B-doped Diamond Depending on Substrate Temperatures

〇Yasushi Hoshino¹, Kaiya Imamura¹, Yuhei Seki^1,2 (1.Kanagawa Univ., 2.Hokkaido Univ.)

Keywords:

ion implantation,doping

In this study, we report the results of a more detailed investigation into the effects of the substrate temperature during ion implantation on the crystallinity and electrical properties of diamond in high-concentration ion implantation doping.