[8p-N321-1~19] 6.2 Carbon-based thin films

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[8p-N321-16] Formation of Low-Resistance Layer by High-Concentration N Ion Implantation into Diamond

〇(M2)Kaiya Imamura¹, Yuhei Seki^1,2, Yasushi Hoshino¹ (1.Kanagawa Univ., 2.Hokkaido Univ.)

Keywords:

ion implantation,Hall effect,Diamond semiconductor