Presentation Information
[8p-N321-17]Fabrication of diamond MOS structure using SiO2/Al2O3 bilayer thin film (3)
〇(M1C)Taichi Saito1, Ryuichi Nakagawa1, Tsubasa Yoshimoto1, Tsubasa Matsumoto2, Norio Tokuda2, Takeshi Kawae1 (1.Kanazawa Univ, 2.NanoMaRi. Kanazawa Univ)
Keywords:
diamond,MOS structure
MOS structures with Al2O3 gate dielectrics deposited by ALD on OH-terminated diamond are known to suppress interface levels and improve device performance. On the other hand, for more stable FET operation, it is desirable to apply SiO2, which has a wider band gap than Al2O3. Therefore, we have proposed the formation of SiO2/Al2O3 bilayer gate dielectrics with ultra-thin Al2O3 as a barrier layer. In this study, we investigated the formation conditions of the stacked structure for further thinning of Al2O3 in order to reduce the operating voltage.