[8p-N321-1~19] 6.2 Carbon-based thin films

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[8p-N321-17] Fabrication of diamond MOS structure using SiO₂/Al₂O₃ bilayer thin film (3)

〇(M1C)Taichi Saito¹, Ryuichi Nakagawa¹, Tsubasa Yoshimoto¹, Tsubasa Matsumoto², Norio Tokuda², Takeshi Kawae¹ (1.Kanazawa Univ, 2.NanoMaRi. Kanazawa Univ)

Keywords:

diamond,MOS structure

MOS structures with Al₂O₃ gate dielectrics deposited by ALD on OH-terminated diamond are known to suppress interface levels and improve device performance. On the other hand, for more stable FET operation, it is desirable to apply SiO₂, which has a wider band gap than Al₂O₃. Therefore, we have proposed the formation of SiO₂/Al₂O₃ bilayer gate dielectrics with ultra-thin Al₂O₃ as a barrier layer. In this study, we investigated the formation conditions of the stacked structure for further thinning of Al₂O₃ in order to reduce the operating voltage.