[8p-N321-1~19] 6.2 Carbon-based thin films

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N321-18] Improvement of blocking voltage in vertical-type 2DHG diamond MOSFETs by nitrogen doped layer

〇(D)Ryo Yoshida^1,2, Nobutaka Oi¹, Akihiko Watanabe³, Ichiro Omura³, Kenji Ueda², Hiroshi Kawarada¹, Tatsuya Fujishima¹ (1.Power Diamond Systems, 2.Waseda Univ., 3.Kyushu Inst. Tech.)

Keywords:

diamond,semiconductor

We report on the breakdown voltage of nitrogen-doped diamond thin films, and confirm that the breakdown voltage improves with increasing nitrogen concentration. These findings will be useful in increasing the voltage resistance of vertical diamond devices.