[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[8p-N322-11] Impact on Drain Current Transient in N-polar GaN HEMTs

〇Junya Yaita¹, Shigeki Yoshida¹, Akihiro Hayasaka¹, Akira Mukai¹, Yuki Imazeki¹, Junji Kotani¹, Kozo Makiyama¹, Ken Nakata¹ (1.Sumitomo Electric)

Keywords:

Nitride Semiconductor