[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N322-12] Shubnikov-de Haas Oscillation of 2DEG in ScAlN/AlGaN/AlN/GaN Heterostructure

〇Yusuke Wakamoto¹, Koei Kubota¹, Takahiko Kawahara², Shigeki Yoshida², Kozo Makiyama², Ken Nakata², Atsushi Kobayashi³, Takuya Maeda¹ (1.UTokyo, 2.Sumitomo Electric Industries, Ltd., 3.Tokyo Univ. of Science)

Keywords:

ScAlN,Shubnikov-de Haas,magnetotransport

ScAlN exhibits a large spontaneous polarization and a small lattice mismatch with GaN, which enables an increased density of the two-dimensional electron gas (2DEG) induced at the ScAlN/GaN heterointerface. These properties make ScAlN a promising material as a barrier layer of GaN-based high electron mobility transistors (HEMTs). In this study, we successfully observed Shubnikov–de Haas (SdH) oscillations in a heterostructure where ScAlN was sputtered on an AlGaN/AlN/GaN structure under low-temperature and high-magnetic-field conditions, allowing for a more detailed investigation of carrier transport properties.