Presentation Information

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N322-13]Transport Property of 2DEG in ScAlN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

〇Kouei Kubota¹, Yusuke Wakamoto¹, Takahiko Kawahara², Shigeki Yoshida², Kozo Makiyama², Ken Nakata², Ryosho Nakane¹, Takuya Maeda¹ (1.UTokyo, 2.Sumitomo Electric Industries, Ltd.)

Keywords:

ScAlN,MBE,mobility

ScAlN/GaN heterostructures were grown by molecular beam epitaxy, and its 2DEG transport properties were investigated. Hall effect measurements revealed a sheet carrier density consistent with the value predicted from theoretical polarization. The temperature dependence of the mobility was analyzed considering interface roughness scattering, polar optical phonon scattering, and acoustic deformation potential scattering. The effective mass used in the analysis was set to 0.24m₀, taking into account the nonparabolicity of the conduction band due to the high sheet carrier density. As a result, the theoretical model shows good agreement with the experimental data.

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