[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N322-14] Electrical characterization of ScAlN thin film grown on GaN/sapphire substrate

〇Kosuke Joya¹, Sawaki Sato², Atsushi Kobayashi², Takuya Maeda¹ (1.UTokyo, 2.TUS)

Keywords:

ScAlN,ferroelectricity

ScAlN exhibits a wide bandgap, strong spontaneous polarization, large piezoelectric coefficients, and ferroelectricity, making it a promising material for realizing novel device functionalities when integrated with conventional nitride semiconductor technologies. Although ferroelectric behavior has recently been reported in metal/ScAlN/n⁺- GaN structures, the large leakage currents and asymmetric ferroelectric characteristics remain insufficiently understood. In this study, we present a detailed investigation of the electrical properties of a sputter-grown ScAlN thin film on GaN/sapphire substrate.