[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[8p-N322-17] Effects of indium on the gate leakage current in an InAlGaN HEMT

〇Atsushi Yamada¹, Toshihiro Ohki¹ (1.Fujitsu Ltd.)

Keywords:

Nitride semiconductor,High electron mobility transistor,InAlGaN

We investigated the impact of indium (In) within barriers on the gate leakage current in InAlGaN HEMTs. The findings showed that the gate leakage current in the InAlGaN barriers depends solely on the two-dimensional electron gas density, regardless of the presence of In atoms. Furthermore, we found that terminating dislocations using an AlN spacer and an amorphous AlN cap is an effective method for suppressing the gate leakage current in InAlGaN HEMTs.