[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N322-3] Temperature-dependence of barrier height in AlN SBDs obtained by I-V and C-V

〇Issei Sasaki¹, Masanobu Hiroki², Kazuhide Kumakura², Kazuyuki Hirama², Yoshitaka Taniyasu², Takuya Maeda¹ (1.UTokyo, 2.NTT-BRL)

Keywords:

AlN,barrier height,Schottky

Aluminum nitride (AlN), thanks to its ultra-wide band gap of ~6.0 eV and high critical breakdown field of >10 MV, is regarded as a promising material for high-voltage, high-temperature electronic devices. In this study, we focus on an AlN Schottky barrier diode (SBD) fabricated on an AlN substrate that exhibits nearly ideal behavior. We have measured and analyzed the temperature dependence of its capacitance–voltage (C–V) and current–voltage (I–V) characteristics, and we report here on the resulting temperature dependence of the barrier height.