[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-N322-4] Comparison between experimental and device simulation data for Low-frequency Y₂₁ and Y₂₂ signals in GaN HEMTs

〇Toshiyuki Oishi¹, Shiori Takada¹, Ken Kudara², Yutaro Yamaguchi², Shintaro Shinjo², Koji Yamanaka² (1.Saga Univ., 2.Mitsubishi Electric)

Keywords:

GaN,trap,low frequency Y parameter