[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N322-6] Evaluation of a surface conductive layer on etched u-GaN by C-V characteristics for charge balance evaluation of polarization superjunction GaN FETs

〇(D)Eito Kokubo¹, Hirotaka Watanabe², Manato Deki³, Atsushi Tanaka², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D center Nagoya Univ., 4.IAR Nagoya Univ.)

Keywords:

Gallium Nitride,Polarization superjunction

We evaluated the surface conductive layer by C-V characteristics for the realization of high-voltage GaN Polarization Superjunction (PSJ) FETs. We fabricated devices with different PSJ lengths and measured the gate-to-drain capacitance, which resulted in two-step C-V characteristics. From a comparison with simulations, we found that the threshold on the low-bias side depends on an n-type surface conductive layer caused by etching. These results indicate that C-V measurement is an effective method for non-destructively and simply evaluating the charge in the surface conductive layer.