[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-N322-7] High-Temperature Electrical Characterization of Mg-Doped AlN Layers

〇(M2)Fuga Miyazawa¹, Hironori Okumura¹, Masataka Imura² (1.Tsukuba Univ, 2.NIMS)

Keywords:

semiconductor,AlN