[8p-N322-1~17] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[8p-N322-8] Suppression of the gate leakage current in N-polar GaN-channel HEMTs on Al₂O₃

〇Yuki Yoshiya¹, Takuya Hoshi¹, Taro Sasaki¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs)

Keywords:

N-polar GaN HEMT,gate Leakage current