[8p-N324-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-N324-4] Analysis of carrier conduction along grain boundaries for polycrystalline Ge TFT

〇linyu huang¹, Kota Igura², Kaoru Toko², Dong Wang¹, Keisuke Yamamoto^1,3 (1.Kyushu Univ., 2.Univ. of Tsukuba, 3.Kumamoto Univ.)

Keywords:

polycrystalline Ge,TFT,carrier conduction

In this study, we investigated the impact of channel shape and width on the performance of n-channel TFTs fabricated using polycrystalline-Ge by SPC. Comparing rectangular and dumbbell-shaped channels, the dumbbell shape effectively reduced the OFF current and improved the ON/OFF ratio. Based on the relationship between channel width and OFF current, we assumed that current flow along grain boundaries dominates in the OFF state and estimated the mobility along grain boundaries to be approximately 20 cm²/Vs. This approach demonstrates the feasibility of analyzing grain boundary effects.