The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[8p-N324-1~13]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Mon. Sep 8, 2025 1:30 PM - 5:00 PM JST
Mon. Sep 8, 2025 4:30 AM - 8:00 AM UTC
N324 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-N324-1]Proposal on tabletop monolithic 3D-IC fab

〇WENCHANG YEH1 (1.Shimane Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[8p-N324-2]Effect of RTA on Upside-Down InSb Films Deposited by RF Sputtering

〇Shuhei Shimizu1, Tatsushi Higa1, Takashi Noguchi1, Takashi Kajiwara2, Taizoh Sadoh2, Tatsuya Okada1 (1.Univ. Ryukyus, 2.Kyushu Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[8p-N324-3]Crystallization of InSb Films on Polyimide using RTA

〇Tatsushi Higa1, Shuhei Shimizu1, Takashi Noguchi1, Takashi kajiwara2, Taizoh Sadoh2, Tatsuya Okada1 (1.Univ. Ryukyus, 2.Kyushu Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-N324-4]Analysis of carrier conduction along grain boundaries for polycrystalline Ge TFT

〇linyu huang1, Kota Igura2, Kaoru Toko2, Dong Wang1, Keisuke Yamamoto1,3 (1.Kyushu Univ., 2.Univ. of Tsukuba, 3.Kumamoto Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-N324-5]Ge nanosheet formation by selective nitrogen removal from Ge nitride films

〇(M2)Shuta Morimoto1,2, Ryunosuke Tsuda1, Takuji Hosoi1,2 (1.Kwansei Gakuin Univ., 2.NIMS)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-N324-6]Surface activated bonding of semiconductor wafers using ALD-Al2O3 thin film

〇Keigo Saito1, Ryuga Kikuchi1, Junichi Suzuki1, Reo Aoyama1, Rin Kawanabe1, Yoshiki Maruyama1, Shuto Fujiwara1, Taisei Kono1, Kouichi Akahane2, Yasushi Inoue1, Shiro Uchida1 (1.Chiba Tech., 2.NICT)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[8p-N324-7]Characterization of Young’s Modulus Anisotropy in Single-Crystal Diamond

〇Zhaozong Zhang1, Wen Zhao1, Guo Chen1, Satoshi Koizumi1, Meiyong Liao1 (1.NIMS)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N324-8]Development of a sensor head for a measurement system of silicon wafer surface temperature distribution using bundled fiber

〇Harumu Ono1, Jiawen Yu1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Hiroshima Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[8p-N324-9]CLC Grain-Boundary-Free Si film Growth from the Explosively Crystallized Films

〇Nobuo Sasaki1,2, Satoshi Takayama2, Yukiharu Uraoka2 (1.Sasaki Consulting, 2.NAIST)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[8p-N324-10]Cu-MIC double-gate poly-Ge TFT on plastic subtrates with CuAl2 phase in SD

〇Akito Kurihara1, Daiki Goshima1, Akito Hara1 (1.Tohoku Gakuin Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-N324-11]Development of Si capacitors with a breakdown voltage exceeding 1 kV using a thermal oxide-based dielectric layer.

〇Akira Sagawa1, Shunsuke Akasaka1 (1.ROHM Co., Ltd.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[8p-N324-12]Development of high-Q and high-frequency piezoelectric thin-film resonators

〇Yurina Amamoto1, Koji Terumoto1, Kenji Goda1, Noriyuki Shimoji1, Takashi Naiki1, Takashi Kimura1, Yoshiaki Oku1 (1.Rohm Co., Ltd.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[8p-N324-13]Noise characteristics of piezoresistive readout in SOI MEMS beam resonators

〇Ryotaro Takeuchi1, Zhang Ya1, Liu Qian1, Hirakawa Kazuhiko1, Morohashi Isao2 (1.Tokyo Univ. of Agri., 2.NICT)
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