Presentation Information

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-N324-6]Surface activated bonding of semiconductor wafers using ALD-Al2O3 thin film

〇Keigo Saito¹, Ryuga Kikuchi¹, Junichi Suzuki¹, Reo Aoyama¹, Rin Kawanabe¹, Yoshiki Maruyama¹, Shuto Fujiwara¹, Taisei Kono¹, Kouichi Akahane², Yasushi Inoue¹, Shiro Uchida¹ (1.Chiba Tech., 2.NICT)

Keywords:

Surface activated bonding

In this study, we investigated the electrical characteristics when ALD-Al2O3 was introduced as an intermediate layer in p-Si/p-Si. We deposited Al2O3 on a p-Si substrate equipped with an ohmic electrode using ALD method and conducted a bonding experiment. The experimental results showed that the interface resistivity of p-Si/Al2O3//Al2O3/p-Si sample with annealed process decreased compared to the p-Si/p-Si sample.

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