[8p-N324-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[8p-N324-9] CLC Grain-Boundary-Free Si film Growth from the Explosively Crystallized Films

〇Nobuo Sasaki^1,2, Satoshi Takayama², Yukiharu Uraoka² (1.Sasaki Consulting, 2.NAIST)

Keywords:

cw laser crystallization (CLC),explosive crystallization

A huge 0.2mm x 10 mm grain-boundary-free single crystalline Si film has been grown on quartz and glass by CW laser crystallization (CLC). This SOI structure is promising to fabricate monolithic 3D-Chips with low cost. This paper discusses the grain-boundary-free film is grown by the two step crystallization processes: the explosive crystallization to form poly-Si from amorhous Si and scanned laser crystallization to form single-crystal Si from the poly-Si.