[8p-N401-1~12] 15.5 Group IV crystals and alloys

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[8p-N401-1] Formation of high-quality epitaxial Ge layer on Si(111) substrate by sputtering method

〇Taichi Okuda¹, Akio Ohta², Ryo Yokogawa^3,4, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,5, Shigehisa Shibayama¹ (1.Nagoya Univ., 2.Fukuoka Univ., 3.RISE, 4.Hiroshima Univ., 5.IMaSS)

Keywords:

Germanium,sputtering