[8p-N401-1~12] 15.5 Group IV crystals and alloys

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-N401-10] Epitaxial growth and strain engineering of Si_1−xSn_x films on Si_1−yGe_y buffer layers

〇Sosei Ito¹, Masashi Kurosawa¹, Wei-Chen Wen², Yuji Yamamoto², Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IHP - Leibniz Institute for High Performance Microelectronics, 3.IMaSS, Nagoya Univ.)

Keywords:

silicon tin,SiSn,strain engineering