[8p-N401-1~12] 15.5 Group IV crystals and alloys

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-N401-2] Sputtering heteroepitaxy of Ge_1−xSn_x layers with high Sn content on Si(001) substrates

〇Kousaku Goto¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS Nagoya Univ.)

Keywords:

semiconductor