Presentation Information

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-N401-7]Examination of Method for Evaluating Critical Thickness of SiGe/Si(110) Structures

〇Koji Usuda¹, Kiu Inami^2,4, Naoto Kumagai^2,3, Tloshifumi Irisawa^2,3, Atsushi Ogura^1,4 (1.Meiji Univ., MREL, 2.AIST, SFRC, 3.LSTC, 4.Meiji Univ.)

Keywords:

SiGe,Si(110),critical thickness

The next generation of NS-FETs is expected to use (110), which is expected to improve pMOS characteristics. However, the (110) has an asymmetric crystal surface structure, so it is expected that the epitaxial growth of the SiGe and Si layers required to realize an NS channel will be technically difficult. In particular, it is predicted that the critical thickness limit for forming a defect-free SiGe layer on Si(100) will be stricter than for (100). In this paper, we therefore report our investigation of the critical thickness of the SiGe layer in SiGe/Si(110).

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