Presentation Information

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N401-8]Anisotropy Analysis of SiGe Thin Film Grown on Si (110) Off-Angle Substrates by Chemical Vapor Deposition

〇(M1)Kiu Inami^1,2, Koji Usuda³, Naoto Kumagai^1,4, Toshifumi Irisawa^1,4, Atsushi Ogura^2,3 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL, 4.LSTC)

Keywords:

SiGe,(110),Raman Spectroscopy

The effects of substrate off-direction and off-angle on the surface structure of SiGe thin films grown on Si (110) were investigated. It was found that the post-growth surface structure varied significantly depending on the off-direction of the substrate. In addition, the substrate off-angle was shown to have a substantial impact on the lattice strain after film deposition.

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