[8p-P03-1~4] 13.3 Insulator technology

[8p-P03-1] Breaking energy of hydrogen bonds in SiN_x and SiO_x films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

Keywords:

Silicon nitride,Hydrogen diffusion,Molecular orbital calculation

Using molecular orbital calculations, we analyzed the energy barriers required for hydrogen to move by breaking Si-H, N-H, and O-H bonds in SiN_x and SiO_x films with vacancies and clarified their effect on hydrogen diffusion.