Presentation Information
[8p-P03-2]Impact of Interface Trap Density Distribution near Conduction Band Edge on C-V Characteristics of Si MOS Capacitor
〇Koei Matsubara1, Shoma Kato1, Hinata Suzuki1, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, Noriyuki Taoka1 (1.Aichi Inst. Tech., 2.Nagoya Univ.)
Keywords:
Cryogenic,interface state,Quantum Computer