Presentation Information

[8p-P03-3]Electrical Prorerties of Hf-oxide Layer on Si Substrate Formed by Post Oxidation

〇Riku Kayagi1, Kito Sakou1, Naoya Takasu1, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, Noriyuki Taoka1 (1.Aichi Inst.Tech, 2.Nagoya Univ)

Keywords:

Hf-oxide,MOS