Presentation Information
[8p-P03-3]Electrical Prorerties of Hf-oxide Layer on Si Substrate Formed by Post Oxidation
〇Riku Kayagi1, Kito Sakou1, Naoya Takasu1, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, Noriyuki Taoka1 (1.Aichi Inst.Tech, 2.Nagoya Univ)
Keywords:
Hf-oxide,MOS
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