[8p-P04-1~9] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[8p-P04-1] Effect of electron coupling energy level on circularly polarized luminescence properties of InGaAs quantum dots tunnel-coupled with a GaNAs quantum well

〇Yuma Suzuki¹, Hiroto Kise², Ayano Morita², Junichi Takayama², Akihiro Murayama², Satoshi Hiura² (1.Hokkaido Univ., 2.IST, Hokkaido Univ.)

Keywords:

quantum dot,dilute nitride semiconductor,photoluminescence