Presentation Information
[8p-P04-5]Room temperature negative differential resistance characteristics of n-type Si/CaF2 double-barrier Resonant Tunneling Diode with CaF2 embedded structure
〇Takahiro Kobayashi1, Ryoya Usami1, Kanta Murakami1, Ken Hattori1, Masahiro Watanabe1 (1.Science Tokyo)
Keywords:
semiconductor,resonant tunneling diode
The Si/CaF2 heterostructure allows for stacked epitaxial growth on a Si substrate, owing to its similar crystal structure and close lattice constants. Previous research has reported the demonstration of room-temperature operation of resonant tunneling diodes (RTD) using this structure. In this work, we have, for the first time in an n-type RTD, employed a crystalline CaF2 embedded structure and have also improved the etching process for the Si strain-compensation layer on the CaF2 of the RTD sidewalls. As a result, we report the first stable and repeatable observation of Negative Differential Resistance (NDR) characteristics at room temperature in an n-type RTD structure.