[8p-P10-1~49] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8p-P10-22] NiO Growth on Different-Oriented β-Ga₂O₃ and Glass Substrates

〇(M1)Sunao Tateishi¹, Arihumi Okada¹ (1.Kyoto Inst. Tech.)

Keywords:

semiconductor,Galium Oxide,Crystal growth

In this study, NiO films were prepared via mist-CVD on fused-silica glass and two differently-oriented β-Ga₂O₃ substrates. The morphologies were observed mainly using AFM. The crystallinities of the samples were evaluated using XRD. The electronic structures of the samples were estimated using UV-vis spectroscopy and XPS. The obtained NiO thin films on glass and (-201), (001)-orientedβ-Ga₂O₃ substrates showed different crystal shapes. These morphologies of the samples were consistent with XRD patterns. Contrary to expectations, NiO grown on glass substrates also showed inhomogeneous orientation.