Presentation Information
[8p-P10-22]NiO Growth on Different-Oriented β-Ga2O3 and Glass Substrates
〇(M1)Sunao Tateishi1, Arihumi Okada1 (1.Kyoto Inst. Tech.)
Keywords:
semiconductor,Galium Oxide,Crystal growth
In this study, NiO films were prepared via mist-CVD on fused-silica glass and two differently-oriented β-Ga2O3 substrates. The morphologies were observed mainly using AFM. The crystallinities of the samples were evaluated using XRD. The electronic structures of the samples were estimated using UV-vis spectroscopy and XPS. The obtained NiO thin films on glass and (-201), (001)-orientedβ-Ga2O3 substrates showed different crystal shapes. These morphologies of the samples were consistent with XRD patterns. Contrary to expectations, NiO grown on glass substrates also showed inhomogeneous orientation.