[8p-P10-1~49] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

English Presentation

[8p-P10-25] Deep-level traps in β-(Al_xGa_1-x)₂O₃ Schottky barrier diodes studied by deep level transient spectroscopy

〇(DC)Yun Jia¹, Hironori Okumura¹, Aboulaye Traore², Yui Sasaki¹, Kota Nakano¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.Sorbonne Paris Nord Univ.)

Keywords:

Ultra Wide bandgap semiconductor,Deep level transient spectroscopy,Ga2O3

In this work, we fabricated vertical Schottky Barrier Diode (SBD) devices based on β-(Al_xGa_1-x)₂O₃ and analyzed defect information within the material through various electrical characterization techniques, including current-voltage (J-V) and Deep-Level Transient Spectroscopy (DLTS).