[8p-P10-1~49] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

英語発表

[8p-P10-25] Deep-level traps in β-(Al_xGa_1-x)₂O₃ Schottky barrier diodes studied by deep level transient spectroscopy

〇(DC)Yun Jia¹, Hironori Okumura¹, Aboulaye Traore², Yui Sasaki¹, Kota Nakano¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.Sorbonne Paris Nord Univ.)

キーワード：

Ultra Wide bandgap semiconductor、Deep level transient spectroscopy、Ga2O3

In this work, we fabricated vertical Schottky Barrier Diode (SBD) devices based on β-(Al_xGa_1-x)₂O₃ and analyzed defect information within the material through various electrical characterization techniques, including current-voltage (J-V) and Deep-Level Transient Spectroscopy (DLTS).