Presentation Information
[8p-P10-32]Measurement of Electric Properties of NiO/β-Ga2O3 Using Ga-In Electrodes
〇(M2)Yuto Nishi1, Okada Arifumi1 (1.Kyoto Inst. Tech)
Keywords:
semiconductor,Gallium oxide,Current-Voltage characteristics
In this study, NiO/β-Ga2O3 structure was prepared using sol-gel method. As an electrode material, liquid Ga-In alloys with compositions around the eutectic point were adopted. On the bare substrate surface, 26.5 wt%-In alloy showed a linear current-voltage relationship suggesting the Ohmic contact was achieved. After NiO formation, the substrate surfaces were fully covered by particles. The particle size was approximately 20 nm of diameter. The surfaces covered by particles showed lowered wettability with Ga-In alloys. The NiO/β-Ga2O3 samples show rectification characteristics. However, the samples also showed inconstant resistivity, suggesting that the lowered wettability affects the contact between samples and alloys.