[8p-P10-1~49] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8p-P10-33] Thickness Dependence of Electronic States of Nanosheet Oxide Semiconductors at the Electrode-Oxide Interface

〇SUNBIN HWANG¹, Kota Sakai³, Takanori Takahashi², Mutsunori Uenuma¹, Shinji Migita¹, Yukiharu Uraoka², Masaharu Kobayashi³ (1.AIST, 2.NAIST, 3.IIS The Univ. Tokyo)

Keywords:

Electronic States of Semiconductor,Nanosheet Oxide Semiconductor,Electrode-Oxide Semiconductor Interface