[8p-P10-1~49] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8p-P10-38] EffectImprovement of annealingtransparent temperatureconductivity onof Zr-doped ZnO transparent conducting thin films

〇kosuke Matsumoto¹, Ichiro Takano² (1.Grad School, Kogakuin Univ., 2.Kogakuin Univ.)

Keywords:

Transparent Conductive Film,semiconductor,Zinc Oxide

ITO is the most widely used transparent conductive film, but since In is a rare metal and its supply is unstable, research on alternatives has been active. ZnO and SnO2 have been mentioned as candidates for alternative materials, but their high resistivity when used alone poses a challenge. In this study, ZnO was formed at room temperature and simultaneously doped with Zr, which has a similar crystal structure and electronegativity to ZnO. Furthermore, we evaluated the properties of ZnO as a transparent conductive film by annealing after film deposition.