[8p-P10-1~49] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8p-P10-43] Effect of Electroforming on Switching Behavior in SiO_x ReRAM with ITO Electrodes

〇(M1C)Yuito Makishima¹, Kento Moriya¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:

semiconductor,non volatile memory,resistive random access memory