Presentation Information
[8p-P10-44]Effect of RF power and deposition pressure on crystallinity and leakage current properties of HfO2 thin films
〇Taiyo Shinoda1, Hidenori Kawamura1,2, Mutsumi Kimura1 (1.Ryukoku Univ., 2.IMPR Center)
Keywords:
ferroelectric
In this study, we optimized the deposition conditions of HfO2 films by RF magnetron sputtering. Deposition was performed by systematically varying the deposition pressure and RF power, and crystallinity and leakage current properties were evaluated. SEM and XRD results showed that higher RF power resulted in higher crystallinity and continuous films. J-V measurements showed that leakage current density was suppressed to less than 4 nA/cm² under optimum conditions.