[9a-N105-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N105-3] Hard X-ray photoemission spectroscopy of InGaZn₂O₅ bulk single crystals

〇Ayumi Kobayashi^1,2, Ryoya Yamagishi², Yasutaka Sawata², Kento Ishigaki^1,2, Yusuke Kawamura¹, Yuto Uruma¹, Tadahito Inoue¹, Momoka Hirai², Naoki Kase^1,2, Akira Yasui³, Jiayi Tang³, Nobuaki Miyakawa^1,2, Tomohiko Saitoh^1,2 (1.Tokyo Univ. of Sci.B, 2.Tokyo Univ. of Sci.AP, 3.JASRI)

Keywords:

wide band gap semiconductor,photoelectron spectroscopy

IGZO, a transparent conducting oxide, has electronic structures that are strongly influenced by oxygen vacancies. In this study, we investigated bulk single crystals of IGZO-12 using hard X-ray photoelectron spectroscopy to analyze the distribution of oxygen vacancies and their effects on the electronic structure. A comparative study with IGZO-11 and IGZO-13 was conducted to explore the origin of these differences.