[9a-N105-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N105-8] ALD-Based Sn-Doped InGaZnO FETs with Reliability Enhancement

〇(D)Sunghun Kim¹, SunHong Choi¹, Kota Sakai¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, The Univ. of Tokyo, 2.d.lab, The Univ. of Tokyo)

Keywords:

Oxide semiconductor,Monolithic 3D,IGZTO

This work presents the fabrication and characterization of Sn-doped IGZO FETs using ALD. By leveraging precise compositional and thickness control, we achieve both enhanced mobility and reliability over conventional IGZO devices. These findings establish IGZTO as a promising candidate for next-generation OS channel materials in monolithic 3D integrated systems.