[9a-N105-1~10] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

11:00 〜 11:15奨励賞エントリー

[9a-N105-8] ALD-Based Sn-Doped InGaZnO FETs with Reliability Enhancement

〇(D)Kim Sunghun¹、Choi SunHong¹、Sakai Kota¹、Saraya Takuya¹、Hiramoto Toshiro¹、Kobayashi Masaharu^1,2 (1.東京電気系、2.東京生産研)

キーワード：

酸化物半導体、Monolithic 3D、IGZTO

This work presents the fabrication and characterization of Sn-doped IGZO FETs using ALD. By leveraging precise compositional and thickness control, we achieve both enhanced mobility and reliability over conventional IGZO devices. These findings establish IGZTO as a promising candidate for next-generation OS channel materials in monolithic 3D integrated systems.