[9a-N107-1~11] 6.4 Thin films and New materials

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N107-3] Thermoelectric property of Cu₂Se thin films doped with FeSi₂ at room temperature

〇Masahiro Goto¹, Michiko Sasaki¹, Taku Moronaga¹, Toru Hara¹, Yibin Xu¹ (1.NIMS)

Keywords:

thermoelectric,sputter,thin film

We have developed a novel thermoelectric material by doping FeSi₂ into Cu₂Se, a superionic conductor with low thermal conductivity. By optimizing the composition and nanostructure using a combinatorial sputter coating system, we achieved a zT value of 0.69 at 298 K, surpassing the values of conventional Cu₂Se-based materials.This is attributed to the enhancement of the power factor and control of thermal conductivity through nanostructuring, as well as the presence of multiple Cu_xSe crystalline phases and uniformly dispersed Si and Fe oxide phases. These results demonstrate that FeSi₂-doped Cu₂Se thin films hold significant potential for efficient waste heat recovery around room temperature.